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Communication Dans Un Congrès Année : 2021

Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets

Résumé

In this work, DC and low frequency noise measurements are performed on n-channel gate all around (GAA) vertically stacked silicon nanosheets (NS) at room and liquid nitrogen temperature. Principal static (DC) parameters such as low field mobility, access resistance and subthreshold swing are estimated. Preliminary low frequency noise studies reveal that the 1/f noise may be explained by the carrier number fluctuations mechanism at room and liquid nitrogen temperature operation.
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Dates et versions

hal-03805530 , version 1 (07-10-2022)

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Bogdan Cretu, Anabela Veloso, Eddy Simoen. Low temperature investigation of n-channel GAA vertically stacked silicon nanosheets. 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. pp.1-4, ⟨10.1109/EuroSOI-ULIS53016.2021.9560692⟩. ⟨hal-03805530⟩
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