MBE Growth of Mid-Infrared Lasers on Silicon
Résumé
In this plenary presentation I will first review the issues arising when growing zinc-blende compound semiconductors on (001)Si substrates with a particular focus on the antiphase domain management. I will show that a proper substrate preparation in an MBE environment promotes an organized Si surface which, in turn, allows burying the antiphase domains in a thin (< 1 µm) buffer layer. GaSb-on-Si layers grown in these conditions can then be used as templates for growing a variety of mid-infrared optoelectronic devices that will be presented at the conference.