Communication Dans Un Congrès Année : 2022

MBE Growth of Mid-Infrared Lasers on Silicon

Résumé

In this plenary presentation I will first review the issues arising when growing zinc-blende compound semiconductors on (001)Si substrates with a particular focus on the antiphase domain management. I will show that a proper substrate preparation in an MBE environment promotes an organized Si surface which, in turn, allows burying the antiphase domains in a thin (< 1 µm) buffer layer. GaSb-on-Si layers grown in these conditions can then be used as templates for growing a variety of mid-infrared optoelectronic devices that will be presented at the conference.

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Dates et versions

hal-03791638 , version 1 (06-10-2022)

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  • HAL Id : hal-03791638 , version 1

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Eric Tournié, M Rio Calvo, L Monge-Bartolome, A Gilbert, A Remis, et al.. MBE Growth of Mid-Infrared Lasers on Silicon. Inteernational Conference on Molecular beam Epitaxy, ICMBE 2022, Sep 2022, Sheffield, United Kingdom. ⟨hal-03791638⟩
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