Switching endurance of the molecular spin crossover complex [Fe(HB(tz)3)2] - Archive ouverte HAL Access content directly
Journal Articles Materials Advances Year : 2022

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)3)2]


The spin-state switching stability of the benchmark [Fe(HB(tz)3)2] (tz = 1,2,4-triazol-1-yl) complex is examined in single crystals, thin films and ITO/[Fe(HB(tz)3)2]/Al metal–insulator–metal junctions. In each case, the switching behavior remains virtually unaltered for more than 10 000 endurance cycles in ambient air, even after more than one-year storage time. The structural/morphological integrity of the samples is not affected to any appreciable extent. On the other hand, the junctions exhibit a slow decrease of their conductance. Based on a comparison with analogous ITO/[Zn(HB(tz)3)2]/Al junctions, we attribute this phenomenon to the degradation of the device itself, rather than to the deterioration of the SCO properties. These results highlight the intrinsic stability of certain spin crossover compounds, providing impetus for future work, aiming at both the fundamental understanding of this switching stability and its exploitation in technological applications.
Fichier principal
Vignette du fichier
Zhang, Switching endurance of the molecular spin, 2022.pdf (1.97 Mo) Télécharger le fichier
Origin : Publisher files allowed on an open archive

Dates and versions

hal-03790181 , version 1 (28-09-2022)





Yuteng Zhang, Lijun Zhang, Karl Ridier, Lionel Salmon, Isabelle Séguy, et al.. Switching endurance of the molecular spin crossover complex [Fe(HB(tz)3)2]: from single crystals to thin films and electronic devices. Materials Advances, 2022, 3 (22), pp.8193-8200. ⟨10.1039/D2MA00802E⟩. ⟨hal-03790181⟩
22 View
11 Download



Gmail Facebook Twitter LinkedIn More