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Article Dans Une Revue ECS Transactions Année : 2013

Low-Frequency Noise in High-K and SiO 2 UTBOX SOI nMOSFETS

S. dos Santos
  • Fonction : Auteur
J. Martino
  • Fonction : Auteur
Vincent Strobel
  • Fonction : Auteur
Bogdan Cretu
Jean-Marc Routoure
  • Fonction : Auteur
Regis Carin
  • Fonction : Auteur
E. Simoen
  • Fonction : Auteur
M. Aoulaiche
  • Fonction : Auteur
M. Jurczak
  • Fonction : Auteur
Cor Claeys
  • Fonction : Auteur

Résumé

The impact of different gate dielectrics on the low-frequency (LF) noise behavior is investigated in UTBOX SOI nMOSFETs. Hafnium silicate (HfSiO) devices are compared to silicon dioxide (SiO 2 ) ones in terms of low-frequency noise apart from the analysis of both front and back-channels. Despite the improvement of process steps for obtaining good dielectric layers, high-k devices have shown elevated current noise spectral density due to the higher number of traps which also degrades the front-channel mobility. Although the buried oxide (BOX) of both wafers is formed by thermal SiO 2 , the strong electrostatic coupling between front and back-channels has resulted in a worse noise performance for high-k devices even at the back interface.
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Dates et versions

hal-03784649 , version 1 (23-09-2022)

Identifiants

Citer

S. dos Santos, J. Martino, Vincent Strobel, Bogdan Cretu, Jean-Marc Routoure, et al.. Low-Frequency Noise in High-K and SiO 2 UTBOX SOI nMOSFETS. ECS Transactions, 2013, 52 (1), pp.87-92. ⟨10.1149/05201.0087ecst⟩. ⟨hal-03784649⟩
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