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Communication Dans Un Congrès Année : 2020

Trap identification on n-channel GAA NW FETs

Résumé

In this work, low frequency noise spectroscopy is performed on n-channel gate all around (GAA) nanowire (NW) FETs. The study of generation-recombination noise at fixed temperature as a function of the applied bias suggests the existence of traps located in the depleted Si film. The temperature evolution of the generation-recombination noise at fixed polarization allows constructing an Arrhenius diagram from which a hydrogen related trap was identified. Moreover, it is suggested that it is more suitable to use the surface trap density as a figure of merit.
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Dates et versions

hal-03784473 , version 1 (23-09-2022)

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A. Bordin, B. Cretu, R. Carin, E. Simoen, G. Hellings, et al.. Trap identification on n-channel GAA NW FETs. 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365281⟩. ⟨hal-03784473⟩
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