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Article Dans Une Revue Solid-State Electronics Année : 2022

Si GAA NW FETs threshold voltage evaluation

Résumé

Semiconductor devices technology evolved from MOSFETs planar architecture to FinFETs and Si Gate-All-Around Nanowires (Si GAA NW) FETs structural design. This evolution has continuously decreased the values of transistors threshold voltage and extraction method errors become very important. Different methods for threshold voltage determination will be evaluated in this paper using measured data of GAA NW FETs integrated on a Silicon on Insulator (SOI) substrate, operated both in linear and saturation regions. Differences from the threshold voltage extracted values are studied in this paper.
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Dates et versions

hal-03784467 , version 1 (23-09-2022)

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Dragos Dobrescu, Bogdan Cretu, Eddy Simoen, Anabela Veloso, Andrei Voicu-Spineanu, et al.. Si GAA NW FETs threshold voltage evaluation. Solid-State Electronics, 2022, 194, pp.108317. ⟨10.1016/j.sse.2022.108317⟩. ⟨hal-03784467⟩
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