Si GAA NW FETs threshold voltage evaluation
Résumé
Semiconductor devices technology evolved from MOSFETs planar architecture to FinFETs and Si Gate-All-Around Nanowires (Si GAA NW) FETs structural design. This evolution has continuously decreased the values of transistors threshold voltage and extraction method errors become very important. Different methods for threshold voltage determination will be evaluated in this paper using measured data of GAA NW FETs integrated on a Silicon on Insulator (SOI) substrate, operated both in linear and saturation regions. Differences from the threshold voltage extracted values are studied in this paper.