Doping induced stable room temperature dual emission from gadolinium doped vacancy ordered double halide perovskite, Gd:Cs2SnCl6
Résumé
The recent advancement in bandgap engineering through controlled doping has widen the prospect
of vacancy ordered double halide perovskites (VO DHPs) by conferring them with designable
optoelectronic properties. Here, we report synthesis of Gd doped Cs2SnCl6 via a simple
solvothermal method. Gd3+ ions doping lowers the band gap from 3.8 eV to 2.8 eV and facilitates
stable room temperature dual PL emission centered at 440 nm and 610 nm. The macroscopic
emission process is well supported by the confocal PL emission studies on isolated crystallites.
Both the pristine (Cs2SnCl6) and Gd:Cs2SnCl6 exhibit crystalline cubic structure with Fm3m space
group. Rietveld refinement correlates well with the cubic phase and the analysis of (220) XRD
peak validates the existence of a secondary crystalline phase. SEM studies confirm the anisotropic
growth, forming large micron sized octahedral structures of pristine (> 20 μm) and Gd:Cs2SnCl6
(< 5 μm). This study enhances the experimental understanding of hitherto unknown dual PL
emission properties of Gd:Cs2SnCl6 having implication in quantum photonics leaving a scope for
detail theoretical study on the origin of the electronic transitions.
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