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Article Dans Une Revue Optical Materials Année : 2023

Doping induced stable room temperature dual emission from gadolinium doped vacancy ordered double halide perovskite, Gd:Cs2SnCl6

Résumé

The recent advancement in bandgap engineering through controlled doping has widen the prospect of vacancy ordered double halide perovskites (VO DHPs) by conferring them with designable optoelectronic properties. Here, we report synthesis of Gd doped Cs2SnCl6 via a simple solvothermal method. Gd3+ ions doping lowers the band gap from 3.8 eV to 2.8 eV and facilitates stable room temperature dual PL emission centered at 440 nm and 610 nm. The macroscopic emission process is well supported by the confocal PL emission studies on isolated crystallites. Both the pristine (Cs2SnCl6) and Gd:Cs2SnCl6 exhibit crystalline cubic structure with Fm3m space group. Rietveld refinement correlates well with the cubic phase and the analysis of (220) XRD peak validates the existence of a secondary crystalline phase. SEM studies confirm the anisotropic growth, forming large micron sized octahedral structures of pristine (> 20 μm) and Gd:Cs2SnCl6 (< 5 μm). This study enhances the experimental understanding of hitherto unknown dual PL emission properties of Gd:Cs2SnCl6 having implication in quantum photonics leaving a scope for detail theoretical study on the origin of the electronic transitions.
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hal-03781995 , version 1 (20-09-2022)

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Aadil Ahmad Bhat, Nitesh Singh, Rajesh V Nair, Erik Dujardin, Jadab Sharma. Doping induced stable room temperature dual emission from gadolinium doped vacancy ordered double halide perovskite, Gd:Cs2SnCl6. Optical Materials, 2023, 141, pp.113937. ⟨10.1016/j.optmat.2023.113937⟩. ⟨hal-03781995⟩
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