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Article Dans Une Revue Journal of Electronic Materials Année : 2022

Modeling of High-Current Polycrystalline Silicon Thin Film Transistors by Incorporating Buried Electrode

Résumé

For display applications, high current and large on/off current ratio are pursued for driving and switching transistors. In this article, a thin film transistor (TFT) device incorporating a buried electrode is proposed, which enables increasing the driving current by reducing the channel length, with the channel length only at the drain side. This lateral short-channel TFT enables increasing the on-current while maintaining the field effect mobility, in comparison to our experimental short-channel vertical TFT structure. Another advantage of the proposed structure lies in the suppression of the Schottky barrier at the source and drain contacts when using high-work-function source/drain contacts for an N-type TFT, with an increased on/off current ratio reaching approximately 106. The suppression of Schottky barrier at the source/drain has been verified by the contact resistance measurements. Even though high driving current is obtained, the off-current is still high due to the weakened electric field at the source/drain sides and needs to be further optimized.
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hal-03776594 , version 1 (19-12-2022)

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Peng Zhang, Emmanuel Jacques, Regis Rogel, Laurent Pichon, Olivier Bonnaud. Modeling of High-Current Polycrystalline Silicon Thin Film Transistors by Incorporating Buried Electrode. Journal of Electronic Materials, 2022, 51 (10), pp.5635-5643. ⟨10.1007/s11664-022-09818-x⟩. ⟨hal-03776594⟩
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