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Article Dans Une Revue Microelectronics Reliability Année : 2007

Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology

A. Boukhenoufa
  • Fonction : Auteur
C. Cordier
  • Fonction : Auteur

Dates et versions

hal-03776577 , version 1 (13-09-2022)

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A. Boukhenoufa, L. Pichon, C. Cordier. Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology. Microelectronics Reliability, 2007, 47 (9-11), pp.1419-1423. ⟨10.1016/j.microrel.2007.07.059⟩. ⟨hal-03776577⟩
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