Anisotropic transport investigation through different etching depths in InAs/InAsSb T2SL barrier midwave infrared detector
Résumé
In this paper, an electro-optical investigation is carried out to study the anisotropic behavior of a mid-wavelength infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) XBn barrier detector. The main goal was to improve our understanding of the transport mechanisms in this device. Quantum efficiency measurements are performed on mesa devices with different etching depth. Absorption and lifetime measurements are also realized in order to extract the transport properties and, in particular, the hole vertical mobility. The low value obtained does not seem compatible with miniband transport. A discussion is then conducted, to shed light on the different mechanisms involved in the hole vertical transport.