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Article Dans Une Revue Thin Solid Films Année : 2023

Interplay between boron doping and epitaxial relationships in VO 2 films grown by laser ablation

Résumé

In this contribution, the effect of boron doping on the functional and structural properties of VO2 thin films is investigated. Temperature-dependent measurements were performed on pure and boron-doped (0.5 and 1.3 at.%) VO2 films grown on Al2O3(0001) by Reactive Pulsed Laser Deposition. Increasing the boron concentration leads to a noticeable decrease of the transition temperature (by ∼12°C), accompanied by a significant modification of the hysteresis loop shapes. The phase transition occurs at ca. 73 °C in the undoped film, while it drops down to ca. 60 °C in the film containing the highest boron amount. The undoped sample exhibits the best resistivity contrast (about 4 orders of magnitude) with a relatively narrow hysteresis cycle (∼ 6 °C). The most doped sample has a broad and significantly reduced resistivity contrast (less than 3 orders of magnitude). Raman spectroscopy and high-resolution X-ray diffraction were performed to elucidate the nature of the involved phases and their structure. A correlation was found between increasing the boron concentration and the formation of two peculiar in-plane epitaxial relationships; the VO2 films evolving from one to the other. We also evidenced the presence of the transient M2 phase in the most doped sample.
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Dates et versions

hal-03758478 , version 1 (23-08-2022)

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Aude Bailly, Pierre Bouvier, Stéphane Grenier, Thameur Hajlaoui, Michael Gaudin, et al.. Interplay between boron doping and epitaxial relationships in VO 2 films grown by laser ablation. Thin Solid Films, 2023, 768, pp.139729. ⟨10.1016/j.tsf.2023.139729⟩. ⟨hal-03758478⟩

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