High-Q Silicon-Germanium On-Chip Ring Resonator in the Mid-Infrared
Résumé
We report a high-Q ring resonator in the mid-infrared in a silicon-germanium on silicon chip-based platform. The side-coupled ring exhibits a loaded Q-factor of 90,000 at the operating wavelength around 4.18 µm.
Domaines
Optique / photonique
Fichier principal
High-Q Silicon-Germanium On-Chip Ring Resonator in the Mid-Infrared.pdf (213.9 Ko)
Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)