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Article Dans Une Revue Journal of Applied Physics Année : 2022

Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy

Ece Aybeke
Alexandra-Madalina Siladie
Rémy Vermeersch
Bruno Gayral
Julien Pernot
Bruno Daudin

Résumé

The realization of practical semiconductor nanowire optoelectronic devices requires controlling their electrical transport properties, which are affected by their large surface/volume ratio value and potentially inhomogeneous electrical dopant distribution. In this article, the local carrier density in Si-doped and Mg-doped GaN nanowires grown catalyst-free by molecular beam epitaxy was quantitatively measured using scanning spreading resistance microscopy. A conductive shell surrounding a more resistive core was observed in Mg-doped, p-type GaN nanowires, balancing the formation of a depleted layer associated with sidewall surface states. The formation of this conductive layer is assigned to the peripheral accumulation of Mg dopants up to values in the 1020 /cm3 range, as determined by quantitative energy dispersive x ray spectroscopy measurements. By contrast, Si-doped n-type GaN nanowires exhibit a resistive shell, consistent with the formation of a depleted layer, and a conductive core exhibiting a decreasing resistivity for increasing Si doping level
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Dates et versions

hal-03749708 , version 1 (11-08-2023)

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Ece Aybeke, Alexandra-Madalina Siladie, Rémy Vermeersch, Eric Robin, Oleksandr Synhaivskyi, et al.. Nanoscale imaging of dopant incorporation in n-type and p-type GaN nanowires by scanning spreading resistance microscopy. Journal of Applied Physics, 2022, 131 (7), pp.075701. ⟨10.1063/5.0080713⟩. ⟨hal-03749708⟩
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