Overcoming non-radiative losses with AlGaAs PIN junctions for near-field thermophotonic energy harvesting - Archive ouverte HAL
Pré-Publication, Document De Travail Année : 2022

Overcoming non-radiative losses with AlGaAs PIN junctions for near-field thermophotonic energy harvesting

Résumé

In a thermophotonic device used in an energy-harvesting configuration, a hot light-emitting diode (LED) is coupled to a photovoltaic (PV) cell by means of electroluminescent radiation in order to produce electrical power. Using fluctuational electrodynamics and the drift-diffusion equations, we optimise a device made of an AlGaAs PIN LED and a GaAs PIN PV cell with matched bandgaps. We find that the LED can work as an efficient heat pump only in the near field, where radiative heat transfer is increased by wave tunnelling. A key reason is that non-radiative recombination rates are reduced compared to radiative ones in this regime. At 10 nm gap distance and for 100 cm.s −1 effective surface recombination velocity, the power output can reach 2.2 W.cm −2 for a 600 K LED, which highlights the potential for low-grade energy harvesting.
Fichier principal
Vignette du fichier
PIN_NF-TPX.pdf (1.84 Mo) Télécharger le fichier
aip4-1.rtx (59.39 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03740597 , version 1 (04-08-2022)
hal-03740597 , version 2 (08-08-2022)
hal-03740597 , version 3 (27-09-2022)
hal-03740597 , version 4 (12-01-2023)

Identifiants

Citer

Julien Legendre, Pierre-Olivier Chapuis. Overcoming non-radiative losses with AlGaAs PIN junctions for near-field thermophotonic energy harvesting. 2022. ⟨hal-03740597v1⟩
92 Consultations
121 Téléchargements

Altmetric

Partager

More