Article Dans Une Revue Superlattices and Microstructures Année : 2016

Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET

Résumé

In present analysis initially authors have studied the variation of mobility with lattice temperature in Nitride based superlattice MOSFETs and have compared the results with temperature dependent measured mobility of two dimensional electrons in AlGaN/GaN superlattice structure. Based on these mobilities a superlattice MOSFET is designed in which static characteristics following different scattering mechanisms are discussed.

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Dates et versions

hal-03730568 , version 1 (20-07-2022)

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Kaushik Mazumdar, Gyanesh Kumar Pathak, Aniruddha Ghosal. Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET. Superlattices and Microstructures, 2016, 97, pp.448-451. ⟨10.1016/j.spmi.2016.04.003⟩. ⟨hal-03730568⟩
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