Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 K - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 K

Nicolas Baboux
Damien Deleruyelle

Résumé

Two structures, TiN/HZO/TiN and TiN/HZO/AlOx(2nm)/TiN, were fabricated and their electrical properties were studied down to 4.2 K. Low voltage IVs were carried out as well as polarisation-voltage curves at each temperature steps. The aim was to study and compare the evolution of ferroelectric switching and conduction in HZO for both structures. A systematic study of possible charge transport mechanisms was carried out.
Fichier non déposé

Dates et versions

hal-03719069 , version 1 (10-07-2022)

Identifiants

  • HAL Id : hal-03719069 , version 1

Citer

Benoit Manchon, Dorian Coffineau, Greta Segantini, Nicolas Baboux, Pedro Rojo Romeo, et al.. Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 K. ISAF-PFM-ECAPD 2022, IEEE UFFC, Jun 2022, Tours, France. ⟨hal-03719069⟩
155 Consultations
0 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More