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Article Dans Une Revue IET Power Electronics Année : 2022

Analysis of light and no‐load operation of a 300 kW resonant single active bridge based on 3.3 kV SiC‐devices

Gustavo Fortes
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Philippe Ladoux
Joseph Fabre
D. Flumian
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Résumé

The resonant single active bridge topology (R-SAB) operated in the half-cycle discon-tinuous current mode (HC-DCM) is a very attractive solution due to its high efficiency,low complexity and fixed voltage transfer ratio (DCX). However, as expected for aseries-resonant converter (SRC), its DCX operation depends on the resonant tank circuit-parameters, parasitic capacitive elements and output load. Specially, at light and no-loadoperation, when the system is extremely underdamped, it may present a large output over-voltage due to resonance interactions. This is of prime importance for converters usingmedium voltage (MV) SiC-MOSFETs, which feature significant output capacitances thatcan lead to voltage breakdown of the rectifier semiconductors. Therefore, the supposedfixed-voltage transfer ratio is not entirely valid and deserves a proper understanding dueits criticality. This paper reviews the subject, clarifying its root cause and its multifactorialdependencies. Moreover, it provides a simple solution based on a variable dead-time withfixed magnetizing current experimentally verified with a 300kW/1.8kV R-SAB prototypeimplemented with MV SiC-devices.
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Dates et versions

hal-03699138 , version 1 (13-06-2023)

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Citer

Gustavo Fortes, Philippe Ladoux, Joseph Fabre, D. Flumian. Analysis of light and no‐load operation of a 300 kW resonant single active bridge based on 3.3 kV SiC‐devices. IET Power Electronics, 2022, IET Power Electronics, 15 (14), pp.1540-1549. ⟨10.1049/pel2.12324⟩. ⟨hal-03699138⟩
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