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Article Dans Une Revue Microelectronics Reliability Année : 2000

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

Résumé

We compare in this work, the electrical properties of gate leakage currents induced through the thin SiO2 oxide layer of metal-oxide-semiconductor structures by high energy ion implantation and high field stresses. Even if the high-frequency capacitance-voltage characteristics are very different after both treatments, a comparable increase and similar shapes are found at low fields in static gate current–voltage curves, typical of equivalent oxide damage. Moreover, these stress or implantation induced leakage currents (SILC or IILC, respectively) are both removed in a similar way by a thermal anneal under forming gas at 430°C. We conclude that similar defects could be induced through the oxide by both processes and generate those excess currents by a defect assisted tunneling mechanism.

Dates et versions

hal-03689724 , version 1 (07-06-2022)

Identifiants

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D Goguenheim, Alain Bravaix, J.M Moragues, P Lambert, P Boivin. Comparison of oxide leakage currents induced by ion implantation and high field electric stress. Microelectronics Reliability, 2000, 40 (4-5), pp.751-754. ⟨10.1016/S0026-2714(99)00303-0⟩. ⟨hal-03689724⟩
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