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Journal Articles Optics Express Year : 2022

Low-loss GaN-on-insulator platform for integrated photonics

Abstract

III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultraviolet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material on SiO 2 is achieved through wafer bonding. We show that quality factors up to 230 000 can be achieved with this platform at telecommunication wavelengths. Resonant second harmonic generation is demonstrated with a continuous wave conversion efficiency of 0.24%/W.
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Dates and versions

hal-03681050 , version 1 (30-05-2022)

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Cite

M. Gromovyi, M. El Kurdi, X. Checoury, E. Herth, F. Tabataba-Vakili, et al.. Low-loss GaN-on-insulator platform for integrated photonics. Optics Express, 2022, 30 (12), pp.20737. ⟨10.1364/OE.461138⟩. ⟨hal-03681050⟩
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