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Communication Dans Un Congrès Année : 2022

Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V

Résumé

We report on AlN/GaN MISHEMT technology on SiC substrate for X-band applications. Transistors with 100 nm gate lengths deliver a high off-state breakdown voltage above 180V and 110 V in semi-on state. RF small signal measurements up to a drain bias (VDS) as high as 70V for two different gate lengths (LG). The maximum oscillation frequency (Fmax) strongly increases versus VDS. As a result, Ft/Fmax of 29/276 GHz with a power gain (Umax) of 28 dB at 10 GHz and VDS = 70V has been extracted. To the best of our knowledge, this is the highest small signal power gain achieved at a drain bias of 70 V. These results are attributed to the favorable AlN/GaN epi-design for high frequency operation while inserting a gate dielectric to prevent the gate leakage current and related device degradation under high electric field. Continuous wave (CW) power performances have been assessed at 10 GHz and VDS = 50V in deep class AB operation. A high output power density of 29.1 dBm (8 W/mm) was measured at the peak power added efficiency (PAE) close to 50%. It can be noticed that no-degradation of the transistors occurred subsequently to many load pull sweeps up to VDS = 50V, reflecting the promising device robustness under harsh conditions. These results pave the way for superior X-band performances operating beyond 50 V in a reliable way.
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Dates et versions

hal-03677311 , version 1 (24-05-2022)

Identifiants

  • HAL Id : hal-03677311 , version 1

Citer

Kathia Harrouche, Sri Saran Vankatachalam, François Grandpierron, Etienne Okada, F Medjdoub. Towards highly efficient high power X‐band AlN/GaN MIS HEMTs operating above 50V. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. pp.223, session 5B - B Plasmas & Gas. ⟨hal-03677311⟩
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