High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Résumé

In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer enabling a positive threshold voltage higher than +1 V. The high voltage operation was ensured with a buffer based on AlN/GaN superlattice (SL) delivering a vertical breakdown voltage about 1.1 kV for a leakage current density of 1mA/cm². With the substrate grounded, hard breakdown voltage transistors at VGS = 0V is about 1.45 kV, corresponding to an outstanding breakdown field higher than 2.4 MV/cm. High voltage characterizations revealed a state of the art combination of breakdown voltage at VGS = 0V together with low electron trapping effects up to 1.4 kV as assessed by means of substrate ramp measurements.
Abstract Idriss ECRES2022.pdf (908.83 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03677266 , version 1 (24-05-2022)

Identifiants

  • HAL Id : hal-03677266 , version 1

Citer

Idriss Abid, Youssef Hamdaoui, Jash Mehta, F Medjdoub. High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures. European Conference on Renewable Energy Systems (ECRES 2022), May 2022, Istanbul, Turkey. ⟨hal-03677266⟩
89 Consultations
24 Téléchargements

Partager

More