Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications - Archive ouverte HAL Access content directly
Conference Papers Year : 2021

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

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hal-03676503 , version 1 (24-05-2022)

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  • HAL Id : hal-03676503 , version 1

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Atse Julien Eric N’dohi, Camille Sonneville, Thi Huong Ngo, P. de Mierry, Éric Frayssinet, et al.. Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications. EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom. ⟨hal-03676503⟩
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