Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2001

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs

Résumé

The effects of the substrate voltage are studied in advanced N-MOSFETs with a 3.2m gate-oxide thickness used for logic applications. Results show that the electronic gate current originates at low voltage from tunneling contributions and from the first-induced second impact ionization mechanisms. The injection efficiency is found to be channel-length dependent through a large increase in the gate-current with the increase in the lateral field (vertical field) and the electron-electron scattering for low-energy hot-carriers. Lifetime prediction techniques are compared showing a strong device lifetime reduction with the back bias at VSB = VDD independently of the extrapolating model which can be modeled by the measurement of the gate-current and the emission probability.

Dates et versions

hal-03667870 , version 1 (13-05-2022)

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Citer

Alain Bravaix, D. Goguenheim, N. Revil, E. Vincent. Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs. Microelectronics Reliability, 2001, Microelectronics Reliability, 41 (9-10), pp.1313-1318. ⟨10.1016/S0026-2714(01)00206-2⟩. ⟨hal-03667870⟩
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