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Article Dans Une Revue Microelectronic Engineering Année : 2004

Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs

Résumé

Hot-carrier (HC) degradation in PMOSFETs with thin (Tox = 2 nm) and thick (6.5 nm) gate-oxides are investigated as they show very different damage mechanisms when electrons or holes are involved. It is shown for the first time that hot-hole currents are now directly measured through a thermionic gate-current in Tox = 6:5 nm devices which is limited to hole tunneling currents in high speed (HS) and low leakage (LL) devices with Tox = 2 nm. This is explained by the increase in the surface doping and thinner junction depths which push the HC generation rate shallower to the surface. Results show that injected holes worsen the HC damage in thin and thick gate-oxides PMOSFETs as electrons with a higher mobility quickly tunnel or detrap through a field assisted detrapping mechanism. This is distinguished by the effects of the interface trap generation, the permanent hole trapping and the hole charging discharging on slow traps using alternated stressing. This consequently leads to a significant resistance against HC degradation in 2 nm HS, LL devices with respect to 6.5 nm devices which is explained by the dominant effect of hole discharge from bulk and slow traps in 2 nm devices at the tunneling distance of the interface leaving the dominant effect of interface traps at long term.

Dates et versions

hal-03667759 , version 1 (13-05-2022)

Identifiants

Citer

Alain Bravaix, D Goguenheim, N Revil, E Vincent. Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs. Microelectronic Engineering, 2004, Microelectronic Engineering, 72 (1-4), pp.106-111. ⟨10.1016/j.mee.2003.12.025⟩. ⟨hal-03667759⟩
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