Transformation and processes from thin filmto complex structures semiconductor/insulator/organic/semiconductor/insulator by PECVD interactions - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2022

Transformation and processes from thin filmto complex structures semiconductor/insulator/organic/semiconductor/insulator by PECVD interactions

Résumé

The ability of optical integrated polymeric resonator to act as sensors has been proven several times[1]. Furthermore, in recent years nanophotonics has strongly developed bases on specific symmetric silicon on- insulator (SOI) or SiO2/Si /SiO2 structures[2]. Processes for the realization of complex structures of semiconductors on insulators based on an organicUV210 are detailed here[3]. The advantage of processing the Si /SiO2/UV 210/Si /SiO2 symmetry is linked to electromagnetism’s equations that no longer impose a cut-off thickness. This innovative integrated photonic also allows the study of aggressive substance without damaging the organic thanks to an upper layer covering the component. Several families of multilayers and structures are processed by PECVD interactions and are properly characterized by ellipsometric and Raman analyses. Resonant structures are also cleanly characterized by Free Spectral Rangemeasurements (Fig. 1).
Fichier non déposé

Dates et versions

hal-03667538 , version 1 (13-05-2022)

Identifiants

  • HAL Id : hal-03667538 , version 1

Citer

Jordan Gastebois, Nathalie Coulon, Hervé Lhermite, Christophe Levallois, Alain Moréac, et al.. Transformation and processes from thin filmto complex structures semiconductor/insulator/organic/semiconductor/insulator by PECVD interactions. Journée Ecole Doctoral 3M, Jun 2022, Rennes, France. ⟨hal-03667538⟩
52 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More