Transformation and processes from thin filmto complex structures semiconductor/insulator/organic/semiconductor/insulator by PECVD interactions
Résumé
The ability of optical integrated polymeric resonator to act as sensors has been proven several times[1]. Furthermore, in recent years nanophotonics has strongly developed bases on specific symmetric silicon on- insulator (SOI) or SiO2/Si /SiO2 structures[2]. Processes for the realization of complex structures of semiconductors on insulators based on an organicUV210 are detailed here[3]. The advantage of processing
the Si /SiO2/UV 210/Si /SiO2 symmetry is linked to electromagnetism’s equations that no longer impose a cut-off thickness. This innovative integrated photonic also allows the study of aggressive substance without damaging the organic thanks to an upper layer covering the component. Several families of multilayers and structures are processed by PECVD interactions and are properly characterized by ellipsometric and Raman analyses. Resonant structures are also cleanly characterized by Free Spectral Rangemeasurements (Fig. 1).