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Article Dans Une Revue MRS Proceedings Année : 1995

High Performances of Low Temperature (≤ 600°C) Unhydrogenated Polysilicon Thin Film Transistors

F. Raoult
  • Fonction : Auteur
K. Mourgues
  • Fonction : Auteur
O. Bonnaud
  • Fonction : Auteur

Résumé

Abstract Low temperature unhydrogenated polysilicon thin film transistors are elaborated through a fourmask gate aluminium process. Temperature process does not exceed 600°C. Active layer is made of undoped polysilicon layer, an in-situ phosphorus polysilicon layer constitutes source and drain windows and a SiO 2 APCVD layer ensures gate insulation. The transistors exhibit electrical properties as good as in the case of hydrogenated ones: a low threshold voltage (V T = 4–5 V), an acceptable optimum field effect mobility (≅ 42 cm 2 /Vs), a high On/Off state switching, and a high On/Off state current ratio (≅ 10 7 ) for a drain voltage equal to 1 V.
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Dates et versions

hal-03662116 , version 1 (09-05-2022)

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Citer

L. Pichon, F. Raoult, K. Mourgues, O. Bonnaud. High Performances of Low Temperature (≤ 600°C) Unhydrogenated Polysilicon Thin Film Transistors. MRS Proceedings, 1995, 403, pp.417. ⟨10.1557/PROC-403-417⟩. ⟨hal-03662116⟩
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