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Article Dans Une Revue Microelectronic Engineering Année : 2007

Hot-carrier damage from high to low voltage using the energy-driven framework

Résumé

In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become the dominant contribution to the degradation. For even lower energy Multiple Vibrational Excitation mechanism starts taking the lead.

Dates et versions

hal-03661029 , version 1 (06-05-2022)

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Citer

C. Guerin, V. Huard, Alain Bravaix. Hot-carrier damage from high to low voltage using the energy-driven framework. Microelectronic Engineering, 2007, 84 (9-10), pp.1938-1942. ⟨10.1016/j.mee.2007.04.104⟩. ⟨hal-03661029⟩
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