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Article Dans Une Revue IEEE Transactions on Device and Materials Reliability Année : 2007

The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs

Résumé

In this paper, we confirm that the energy is the driving force of hot-carrier effects. In high-energy long-channel case, the energy-driven paradigm allows to retrieve lucky electron model-like equations although the explanations are different. When the energy is lowered, high-energy electrons generated by electron–electron scattering become the dominant contribution to the degradation. Finally, for even lower energy, multiple vibrational excitation mechanism starts taking the lead.
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Dates et versions

hal-03660369 , version 1 (05-05-2022)

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Chloé Guerin, Vincent Huard, Alain Bravaix. The Energy-Driven Hot-Carrier Degradation Modes of nMOSFETs. IEEE Transactions on Device and Materials Reliability, 2007, IEEE Transactions on Device and Materials Reliability, 7 (2), pp.225-235. ⟨10.1109/TDMR.2007.901180⟩. ⟨hal-03660369⟩
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