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Communication Dans Un Congrès Année : 2020

Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS

Résumé

Extended Drain MOS (EDMOS) transistors were studied about hot-carrier (HC) degradation and its involvement in hard breakdown (BD) events as these smart power devices represent a big challenge to optimize under Off/On mode switching in RF circuits. N-channel devices with gate-length LG=0.5µm and two gate-oxide thicknesses were tested Tox= 2.3nm (GO1) and 8.5nm (GO2). The sensitivity to BD between Off-mode and HC is pointed out in GO1 through the hot-hole injections (HHI) that are involved as a function of gate-voltage VGS = VTH and VGmax where the VTH case induces HC damage that can be used with series resistance increase (RSD ) to detect BD events in the drift region. Hole trapping and interface traps are generated leading to the dominant effect of HHI, with very close generation rates between Off- and On- mode stressing. This can be used to prevent circuit aging giving warning level for confidence in AC lifetime for power amplifiers class E and class A.
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Dates et versions

hal-03659275 , version 1 (04-05-2022)

Identifiants

Citer

Alain Bravaix, Edith Kussener, David Ney, Xavier Federspiel, Florian Cacho. Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. 2020 IEEE International Reliability Physics Symposium (IRPS), Apr 2020, Dallas, France. pp.1-8, ⟨10.1109/IRPS45951.2020.9129214⟩. ⟨hal-03659275⟩
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