New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

Résumé

We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is characterized under DC stress with different gate-length LG and as function of drain voltage VDS and temperature. We show that the leakage current is a better monitor for TDDB dependence under Off-mode stress whereas a new modeling is proposed. It is found that Weibull slopes β are higher in PFET due large amount of injected hot electrons than in NFET when hot holes are involved.
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Dates et versions

hal-03659269 , version 1 (09-06-2023)

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Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho. New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. 2022 IEEE International Reliability Physics Symposium (IRPS), Mar 2022, Dallas, United States. pp.11A.3-1-11A.3-7, ⟨10.1109/IRPS48227.2022.9764431⟩. ⟨hal-03659269⟩
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