Analysis of the interactions of HCD under “On” and “Off” state modes for 28nm FDSOI AC RF modelling - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Analysis of the interactions of HCD under “On” and “Off” state modes for 28nm FDSOI AC RF modelling

Résumé

The study of parameter drift due to interface defect generation in “Off” mode or near Vth is very complex, because it is often concomitant with hot hole trapping which induces turnaround effects. Improving device aging models requires to consider hot-carrier degradation (HCD) in “On/Off states”, interaction of these different modes as well as any dynamic effects. The DC characterization of HCD modes might be insufficient, it is necessary to verify the quasi-static assumption made when we seek to model the degradation under realistic dynamic stress by a secession of static states. We present a detailed analysis of the interactions of HCD under “On” state and “Off” state”. Pulsed stressing are used to analyze the frequency dependence of HCD and “Off-state”. Such approach is required for accurate AC RF ageing modeling.
Fichier non déposé

Dates et versions

hal-03659262 , version 1 (04-05-2022)

Identifiants

Citer

T. Garba-Seybou, X. Federspiel, F. Cacho, Alain Bravaix. Analysis of the interactions of HCD under “On” and “Off” state modes for 28nm FDSOI AC RF modelling. 2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-5, ⟨10.1109/IRPS46558.2021.9405214⟩. ⟨hal-03659262⟩
21 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More