Communication Dans Un Congrès
Année : 2022
Khatir Zoubir : Connectez-vous pour contacter le contributeur
https://hal.science/hal-03656147
Soumis le : dimanche 1 mai 2022-17:16:02
Dernière modification le : vendredi 24 novembre 2023-14:21:19
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- HAL Id : hal-03656147 , version 1
- DOI : 10.1109/EuroSimE54907.2022.9758895
Citer
Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Mounira Bouarroudj-Berkani, Ayda Halouani, et al.. Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics. 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Apr 2022, St Julian, Malta. pp.1-6, ⟨10.1109/EuroSimE54907.2022.9758895⟩. ⟨hal-03656147⟩
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