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Communication Dans Un Congrès Année : 2022

Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics

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hal-03656147 , version 1 (01-05-2022)

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Mustafa Shqair, Zoubir Khatir, Ali Ibrahim, Mounira Bouarroudj-Berkani, Ayda Halouani, et al.. Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics. 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), Apr 2022, St Julian, Malta. pp.1-6, ⟨10.1109/EuroSimE54907.2022.9758895⟩. ⟨hal-03656147⟩
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