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Article Dans Une Revue Electronics Letters Année : 2007

Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures

Résumé

The formation of a buried aluminium oxide from the surface of a GaAs/AlAs epitaxial structure is presented and validated through the localised electroluminescence in a light emitting diode device. This oxidation method relies on photolithography, plasma treatment and wet thermal oxidation. This enables localised buried oxide areas to be formed by a vertical oxidation process applied from the surface. Because of this new technology, the shape of the oxidised areas can be freely designed, unlike when using the standard lateral oxidation technology.
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Dates et versions

hal-03648414 , version 1 (21-04-2022)

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Guilhem Almuneau, C. Amat, P. Gallo, Laurent Jalabert, S. Moumdji, et al.. Free engineering of buried oxide patterns in GaAs/AlAs epitaxial structures. Electronics Letters, 2007, 43 (13), pp.730-732. ⟨10.1049/el:20070974⟩. ⟨hal-03648414⟩
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