Modeling of the Buried Multiple Junction (BMJ) Detector in Reach-Through (RT) Conditions
Résumé
A physically-based model of the Buried Multiple Junction (BMJ) detector has been established with consideration of the device operation in reach-through (RT) conditions. In such a condition, the breakdown voltage of one junction can shift depending on its adjacent junction;s bias voltage. The modeling approach consists in detecting RT conditions, determining depletion limits, electrostatic potential barrier height and thermionic emission current. It allows computations of the detector;s dark currents and spectral responses to monochromatic light illumination. Computations of the detector;s static characteristics have been compared with TCAD simulations and they are in good agreement, which is a model validation. The proposed model explains and determines the detector;s breakdown voltage shift behavior, as well as its changes of spectral responses depending on bias voltages.