High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 1999
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hal-03612809 , version 1 (18-03-2022)

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Gilles Dambrine, J.-P. Raskin, Francois Danneville, D. Vanhoenackel Janvier, J.-P. Colinge, et al.. High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits. IEEE Transactions on Electron Devices, 1999, 46 (8), pp.1733-1741. ⟨10.1109/16.777164⟩. ⟨hal-03612809⟩
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