Gate-dependent magnetoresistance phenomena in carbon nanotubes
Résumé
We report on the first experimental study of the magnetoresistance of double-walled carbon nanotubes under magnetic field as large as 50 Tesla. By varying the field orientation with respect to the tube axis, or by gate-mediated shifting the Fermi level position, evidences for unconventional magnetoresistance are presented and interpreted by means of theoretical calculations.
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