SiGe Based LNA for Data Communication Applications at 211 GHz
Haitham Ghanem
(1, 2)
,
Sylvie Lepilliet
(2, 3)
,
Daniel Gloria
(4)
,
Francois Danneville
(2, 5)
,
Guillaume Ducournau
(2, 1)
Sylvie Lepilliet
- Fonction : Auteur
- PersonId : 745478
- IdHAL : sylvie-lepilliet
Francois Danneville
- Fonction : Auteur
- PersonId : 747124
- IdHAL : francois-danneville
- ORCID : 0000-0002-4725-0010
Guillaume Ducournau
- Fonction : Auteur
- PersonId : 745611
- IdHAL : guillaume-ducournau
- ORCID : 0000-0002-9171-4767
- IdRef : 090868382
Résumé
We report the use of a silicon based 211 GHz preamplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a 5Gbps modulated signal. The Bit Error Rate curve was extracted versus the input power, with and without the amplifier. It is verified that the system margin in the BER curve is improved in relation with the amplifier gain. The use of the silicon based active stage is a proof of concept for next-generation wireless communication systems above 200 GHz leveraging industrial silicon technologies.
Domaines
Sciences de l'ingénieur [physics]Format du dépôt | Notice |
---|---|
Type de dépôt | Communication dans un congrès |
Titre |
en
SiGe Based LNA for Data Communication Applications at 211 GHz
|
Résumé |
en
We report the use of a silicon based 211 GHz preamplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a 5Gbps modulated signal. The Bit Error Rate curve was extracted versus the input power, with and without the amplifier. It is verified that the system margin in the BER curve is improved in relation with the amplifier gain. The use of the silicon based active stage is a proof of concept for next-generation wireless communication systems above 200 GHz leveraging industrial silicon technologies.
|
Auteur(s) |
Haitham Ghanem
1, 2
, Sylvie Lepilliet
2, 3
, Daniel Gloria
4
, Francois Danneville
2, 5
, Guillaume Ducournau
2, 1
1
PHOTONIQUE THZ - IEMN -
Photonique THz - IEMN
( 1067488 )
- Groupe Photonique THz - IEMN UMR8520 - (Terahertz Photonics)
- France
2
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
3
PCMP - IEMN -
Plateforme de Caractérisation Multi-Physiques - IEMN
( 1067502 )
- France
4
ST-CROLLES -
STMicroelectronics [Crolles]
( 23639 )
- 850 rue Jean Monnet BP 16 38926 Crolles
- France
5
ANODE - IEMN -
Advanced NanOmeter DEvices - IEMN
( 1067380 )
- Groupe ANODE (Composants et dispositifs nanométriques) - IEMN LCI - Avenue Poincaré - CS 60069
59650 Villeneuve d'Ascq
- France
|
Actes |
Oui
|
Langue du document |
Anglais
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Invité |
Non
|
Audience |
Internationale
|
Page/Identifiant |
1-2
|
Titre du congrès |
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)
|
Date début congrès |
2021-08-29
|
Date fin congrès |
2021-09-03
|
Ville |
Chengdu
|
Pays |
Chine
|
Projet(s) ANR |
|
Domaine(s) |
|
Éditeur commercial |
|
Collaboration/Projet |
|
Financement |
|
Référence interne |
|
Mots-clés |
en
data communication, elemental semiconductors, error statistics, low noise amplifiers, next generation networks, photodiodes, preamplifiers, silicon, wireless channels
|
DOI | 10.1109/IRMMW-THz50926.2021.9567152 |
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