We report the use of a silicon based 211 GHz preamplifier for THz links. A test bench setup is assembled to evaluate the performance of the amplifier using a uni-traveling-carrier photodiode (UTC-PD) as the source of a 5Gbps modulated signal. The Bit Error Rate curve was extracted versus the input power, with and without the amplifier. It is verified that the system margin in the BER curve is improved in relation with the amplifier gain. The use of the silicon based active stage is a proof of concept for next-generation wireless communication systems above 200 GHz leveraging industrial silicon technologies.