Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation - Archive ouverte HAL Access content directly
Journal Articles Optics Express Year : 2017

Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation

S. Vézian
  • Function : Author
J. Massies
  • Function : Author

Abstract

Porous GaN and (Ga,In)N/GaN single quantum well layers are fabricated using a selective area sublimation (SAS) technique from initially smooth and compact 2-dimensional (D) layers grown on Si(111) or c-plane sapphire substrates. The photoluminescence properties of these porous layers are measured and compared to reference non-porous samples. Whatever the substrate used, the porosity leads to an increase of the room temperature photoluminescence intensity. The magnitude of this increase is related to the initial defect density of the 2D epitaxial layers and to the degree of carrier localization prior to the SAS process.
Fichier principal
Vignette du fichier
OE_Damilano2017 PL porous GaN and InGaN QW.pdf (3.46 Mo) Télécharger le fichier
Origin Publisher files allowed on an open archive

Dates and versions

hal-03553879 , version 1 (03-02-2022)

Identifiers

Cite

B. Damilano, S. Vézian, J. Massies. Photoluminescence properties of porous GaN and (Ga,In)N/GaN single quantum well made by selective area sublimation. Optics Express, 2017, 25 (26), pp.33243. ⟨10.1364/oe.25.033243⟩. ⟨hal-03553879⟩
19 View
27 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More