Silicon tetrafluoride (SiF 4) is a trace component of volcanic gases and is gaining industrial importance. However, a better knowledge of spectroscopic parameters is needed for this molecule in order to derive accurate concentrations. Following a previous reinvestigation of the ν 3 and ν 4 fundamentals [J. Quant. Spectrosc. Radiat. Transfer 260 (2021) 107474], we have undertaken an extensive high-resolution study of its infrared absorption bands. We present here an update of this study. It features the recording of new far-infrared spectra, taking advantage of synchrotron radiation, and a global fit giving a consistent parameter set for the ground and fundamental states of 28 SiF 4 , now including the v 1 = 1 and v 2 = 1 states, by adding to the global analysis the newly measured ν 2 , ν 1 − ν 4 , and ν 4 − ν 2 bands near 264, 412, and 125 cm −1 , respectively. Nearly 20 000 assigned lines pertaining to seven distinct rovibrational bands were fitted with an excellent accuracy (global standard deviation of 0.296). This allows us to obtain an accurate experimental value for the Si−F bond length, r e (SiF 4) = 1.5516985(30)Å. Some new band intensity estimates allow us to update our SiF 4 calculated spectroscopic database.