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Journal Articles Applied Physics Letters Year : 2011

Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence

Abstract

Epitaxial graphene on silicon carbide labeled 6H-SiC (0001) substrate has been patterned using high resolution focused ion beam. Atomic force microscopy and Raman spectroscopy measurements give evidence of the strong resilience of the graphene monolayer to ion irradiation. The morphology and electronic properties of defects versus ion doses exhibit a progressive local amorphization of graphene.
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hal-03513897 , version 1 (06-01-2022)

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B. Prevel, J.-M. Benoit, L. Bardotti, P. Mélinon, A. Ouerghi, et al.. Nanostructuring graphene on SiC by focused ion beam: Effect of the ion fluence. Applied Physics Letters, 2011, 99 (8), pp.083116. ⟨10.1063/1.3628341⟩. ⟨hal-03513897⟩
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