Emerging non-volatile memories, based on resistive switching mechanisms and known as Resistive Random Access Memory (RRAM), are attractive candidates to overcome power, cost and integration density limitations of conventional memories. Moreover, RRAM has exhibited very good tolerance to radiation. In this context, this paper proposes to investigate Single Event Effects in RRAM memory arrays. The decoding circuitry of the memory array, including bit line and source line drivers is targeted. Currents generated by an ionizing particle crossing the memory array are first injected at specific nodes of the memory circuit. Their impact is evaluated by extracting the resistance state of each cell of the memory array before and after the ionizing particle strike. Worst cases scenarios are studied in order to point out the most sensitive configurations able to induce SEE.