An improved monitoring of gate leakage current on SiC Power MOSFETs using source driver topology
Résumé
This paper presents a new source driver topology in order make gate leakage current monitoring and
desaturation (DESAT) protection circuits compatible. As the high voltage diodes’ leakage current flows
through the estimation circuit, both monitoring circuit and protection circuit cannot coexist. One solution is
to drive the power component in the source path. This new topology was successfully implemented and
tested. A gate leakage current monitoring circuit compatible with DESAT protection thanks to this new
topology is proposed in this paper.