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Communication Dans Un Congrès Année : 2022

An improved monitoring of gate leakage current on SiC Power MOSFETs using source driver topology

Résumé

This paper presents a new source driver topology in order make gate leakage current monitoring and desaturation (DESAT) protection circuits compatible. As the high voltage diodes’ leakage current flows through the estimation circuit, both monitoring circuit and protection circuit cannot coexist. One solution is to drive the power component in the source path. This new topology was successfully implemented and tested. A gate leakage current monitoring circuit compatible with DESAT protection thanks to this new topology is proposed in this paper.

Domaines

Electronique Autre
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Dates et versions

hal-03510289 , version 1 (04-01-2022)

Identifiants

  • HAL Id : hal-03510289 , version 1

Citer

Antoine Laspeyres, Loreine Makki, Corentin Darbas, Anne-Sophie Descamps, Christophe Batard, et al.. An improved monitoring of gate leakage current on SiC Power MOSFETs using source driver topology. PCIM Europe Conference, May 2022, Nuremberg, Germany. ⟨hal-03510289⟩
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