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Article Dans Une Revue European Physical Journal: Applied Physics Année : 2021

Nanostructured LaFeO3/Si thin films grown by pulsed laser deposition

Résumé

The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850 °C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. However, due to the shape of the termination, the two types of grains expose the same {110} facets. The prepared lanthanum iron oxide films are iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-δ.
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Dates et versions

hal-03480882 , version 1 (14-12-2021)

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Mateusz Jędrusik, Christian Turquat, Łukasz Cieniek, Agnieszka Kopia, Christine Leroux. Nanostructured LaFeO3/Si thin films grown by pulsed laser deposition. European Physical Journal: Applied Physics, 2021, 96 (3), pp.30301. ⟨10.1051/epjap/2021210195⟩. ⟨hal-03480882⟩
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