Behavior of the ε-Ga 2 O 3 :Sn Evaporation During Laser-Assisted Atom Probe Tomography
Florian Chabanais
(1)
,
Enrico Di Russo
(1)
,
Alexander Karg
(2)
,
Martin Eickhoff
(2)
,
Williams Lefebvre
(1)
,
Lorenzo Rigutti
(1)
Enrico Di Russo
- Fonction : Auteur
- PersonId : 791203
- ORCID : 0000-0003-3829-6567
- IdRef : 23293021X
Williams Lefebvre
- Fonction : Auteur
- PersonId : 175525
- IdHAL : williams-lefebvre
- ORCID : 0000-0002-0640-8555
- IdRef : 061282936
Lorenzo Rigutti
- Fonction : Auteur
- PersonId : 175282
- IdHAL : lorenzo-rigutti
- ORCID : 0000-0001-9141-7706
- IdRef : 197992595
Résumé
The measurement of the composition of ε-Ga 2 O 3 and the quantification of Sn doping in ε-Ga 2 O 3 :Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending on the experimental conditions. Both the role of the laser energy and surface electric field were investigated, and the results clearly indicate that deviations from stoichiometry are observed changing the electric field conditions during APT. The measured atomic fraction of Ga can change from 0.45 at low field to 0.38 at high field, to be compared with the expected 0.4. This was interpreted in terms of preferential evaporation of Ga at high field and deficit of O at low field, which was caused by the formation of neutrals. The quantification of Sn-doping is accurate at low-field conditions, with an overestimation of the detected Sn-metallic fraction at high field. This suggests that Sn has a higher evaporation field compared to Ga. Finally, multiple detection events were in-depth studied, revealing that three dissociation reactions occur during APT: GaO 2+ → Ga + + O + ; Ga 2 O 2 2+ → Ga + + GaO 2 + ; Ga 3 O 2 2+ → Ga + + Ga 2 O 2 + . Nevertheless, only 2% of the detected events are related to such dissociation reactions, too small a fraction to fully explain the observed deviation from the stoichiometric composition in ε-Ga 2 O 3 .
Abstract
Format du dépôt | Notice |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Behavior of the ε-Ga 2 O 3 :Sn Evaporation During Laser-Assisted Atom Probe Tomography
|
Résumé |
en
The measurement of the composition of ε-Ga 2 O 3 and the quantification of Sn doping in ε-Ga 2 O 3 :Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending on the experimental conditions. Both the role of the laser energy and surface electric field were investigated, and the results clearly indicate that deviations from stoichiometry are observed changing the electric field conditions during APT. The measured atomic fraction of Ga can change from 0.45 at low field to 0.38 at high field, to be compared with the expected 0.4. This was interpreted in terms of preferential evaporation of Ga at high field and deficit of O at low field, which was caused by the formation of neutrals. The quantification of Sn-doping is accurate at low-field conditions, with an overestimation of the detected Sn-metallic fraction at high field. This suggests that Sn has a higher evaporation field compared to Ga. Finally, multiple detection events were in-depth studied, revealing that three dissociation reactions occur during APT: GaO 2+ → Ga + + O + ; Ga 2 O 2 2+ → Ga + + GaO 2 + ; Ga 3 O 2 2+ → Ga + + Ga 2 O 2 + . Nevertheless, only 2% of the detected events are related to such dissociation reactions, too small a fraction to fully explain the observed deviation from the stoichiometric composition in ε-Ga 2 O 3 .
es
Abstract
|
Auteur(s) |
Florian Chabanais
1
, Enrico Di Russo
1
, Alexander Karg
2
, Martin Eickhoff
2
, Williams Lefebvre
1
, Lorenzo Rigutti
1
1
GPM -
Groupe de physique des matériaux
( 970 )
- Avenue de l'Université, BP 08, 76801 Saint-Etienne-du-Rouvray Cedex
- France
2
University of Bremen
( 461380 )
- P.O. Box 330440 28334 Bremen Germany
- Allemagne
|
Langue du document |
Anglais
|
Nom de la revue |
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication |
2021-08
|
Volume |
27
|
Numéro |
4
|
Page/Identifiant |
687-695
|
Domaine(s) |
|
Projet(s) ANR |
|
DOI | 10.1017/S1431927621000544 |
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