Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors - Archive ouverte HAL
Article Dans Une Revue Semiconductor Science and Technology Année : 2019
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hal-03462243 , version 1 (01-12-2021)

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Philippe Ferrandis, Mariam El-Khatib, Marie-Anne Jaud, Erwan Morvan, Matthew Charles, et al.. Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors. Semiconductor Science and Technology, 2019, 34 (4), pp.045011. ⟨10.1088/1361-6641/ab07d2⟩. ⟨hal-03462243⟩
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