Strong interlayer hybridization in the aligned SnS2/WSe2 hetero-bilayer structure
Résumé
The combination of monolayers of different two-dimensional (2D) materials into van der Waals hetero-bilayer structures creates unprecedented physical phenomena, acting as a powerful tool for future devices. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the hybridization of hetero-bilayer structures. Here, we show strong hybridization effects arising between the constitutive single layers of a SnS 2 /WSe 2 hetero-bilayer structure grown by chemical vapor deposition. Surprisingly, the valence band maximum position of WSe 2 is moved from the K point for the single layer WSe 2 to the Γ point for the aligned SnS 2 /WSe 2 hetero-bilayer. Additionally, a significant photoluminescence quenching is observed for the SnS 2 /WSe 2 heterobilayer structure with respect to the WSe 2 monolayer. Using photoluminescence spectroscopy and nano-angle-resolved photoemission spectroscopy techniques, we demonstrate that the SnS 2 /WSe 2 heterostructure present a type-II band alignment. These findings directly answer many outstanding questions about the electronic band structure and the band offset of SnS 2 /WSe 2 hetero-bilayers for envisaging their applications in nanoelectronics.
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