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Article Dans Une Revue Journal of Physical Chemistry C Année : 2021

Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors

Lorenzo Rigutti
Enrico Di Russo
Ivan Blum
Jonathan Houard
Williams Lefebvre
François Vurpillot

Résumé

We report on the microscopic behavior of residual hydrogen on nanometric field emitters. By using homogeneous or heterostructured semiconductor specimens analyzed in a laser-assisted atom probe, it is possible to study how the relative abundances of the ionic species H+, H2+, and H3+ depend on the microscopic electric field, estimated through post-ionization statistics. In the case of Ga-containing semiconductors, the relative abundances of H+, H2+, and H3+ follow a common trend, independent of the nonmetallic component of the matrix. The dependence of the total H flux on the electric field exhibits a more complex behavior, which depends also on the spatial direction of the variation of the field (in-depth or on-surface). The analysis of multiple detection events provides further insights into surface chemistry. Noticeably, H+–H3+ ion pairs are both correlated in number and separated by very small distances on the detector space, suggesting a possible reaction 2H2 → H3++H++2e– taking place on the field emitter surface.
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Dates et versions

hal-03448318 , version 1 (23-11-2022)

Identifiants

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Lorenzo Rigutti, Enrico Di Russo, Florian Chabanais, Ivan Blum, Jonathan Houard, et al.. Surface Microscopy of Atomic and Molecular Hydrogen from Field-Evaporating Semiconductors. Journal of Physical Chemistry C, 2021, 125 (31), pp.17078-17087. ⟨10.1021/acs.jpcc.1c04778⟩. ⟨hal-03448318⟩
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