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Article Dans Une Revue ACS Applied Materials & Interfaces Année : 2021

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Arnaud Proietti
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Résumé

Bismuth-Antimony alloys () is the first reported 3D Topological Insulator (TI). Among many TIs reported to the date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low current spin-orbit-torque (SOT) magnetoresistive random access memories (MRAM). Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the inte
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Dates et versions

hal-03407922 , version 1 (28-10-2021)

Identifiants

Citer

Dima Sadek, Daya S Dhungana, Roland Coratger, Corentin Durand, Arnaud Proietti, et al.. Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate. ACS Applied Materials & Interfaces, 2021, 13 (30), pp.36492-36498. ⟨10.1021/acsami.1c08477⟩. ⟨hal-03407922⟩
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